N-Channel MOSFET - ETC
Description
HF10N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 0.
85 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
●
2.
Drain
◀
1.
Gate
▲
● ●
3.
Source
General Description
This Power MOSFET is produced using Wisdom ’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220F
1
2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage
(* Drain current limited by junction temperature)
Parameter
Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Value
620 10 5 30
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
420 14.
7 4.
5 60 0.
38 - 55 ~ 150 300
Thermal Characteristics
Value Symbol
RθJC RθJA
Parameter Min.
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient -
Units Typ.
-
Max.
2.
6 62.
5 °C/W °C/W
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HF10N60
Electrical Characteristics
Symbol Off Characteristics
BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 600V, VGS = 0V Drain-Source Leakage Current Gate-Source Leakage, Forward IGSS Gate-source Leakage, Reverse VGS = -30V, VDS = 0V -100...
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