2SA614 - INCHANGE
Description
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA614
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.
) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.
5V (Max.
)@ IC= -1A ·Collector Power Dissipation: PC= 25W@ TC= 25℃
APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
w w
PARAMETER
s c s i .
w
VALUE -80 -55 -5 -3 25
UNIT
n c .
i m e
V
V
VEBO
Emitter-Base Voltage
V
IC
Collector Current-Continuous
A
PC
Collector Power Dissipation
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.
iscsemi.
cn
www.
DataSheet.
in
Free Datasheet http://www.
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SA614
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA; IB= 0
-55
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -500μA; IE= 0
-80
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -500μA; IC= 0
-5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -1A; IB= -0.
1A
B
-0.
5
V
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
hFE Classifications R 40-80 O 70-140
w
Y
.
w w
n c .
i m e s c is
VEB= -5; IC= 0 IC= -0.
5A; VCE= -5V 40
VCB= -80V; IE= 0
-50
μA
-50
μA
240
120-240
isc Website：www.
iscsemi.
cn
2
www.
DataSheet.
in
Free Datasheet http://www.
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