Silicon NPN Darlington Power Transistor - INCHANGE
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage-
:V CE(sat)= 2.
0V(Max) @IC= 4A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Igniter applications ·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
2.
0 W
30
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1410
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isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; L= 40mH
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
ICBO
Collector Cutoff Current
VCB= 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE -1
DC Current Gain
IC= 2A ; VCE= 2V
hFE -2
DC Current Gain
IC= 4A ; VCE= 2V
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest=1MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4A , IB1= IB2= 40mA RL= 25Ω; VCC= 100V
2SD1410
MIN TYP.
MAX UNIT
250
V
2.
0
V
2.
5
V
500 μA
500 μA
2000
200
35
pF
1.
0
μs
8.
0
μs
5.
0
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
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