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1.5KE11

Taiwan Semiconductor

(1.5KE Series) Transient Voltage Suppressor Diodes - Taiwan Semiconductor


1.5KE11
1.5KE11

PDF File 1.5KE11 PDF File



Description
1.
5KE SERIES Transient Voltage Suppressor Diodes Voltage Range 6.
8 to 440 Volts 1500 Watts Peak Power 5.
0 Watts Steady State Features UL Recognized File # E-96005 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Exceeds environmental standards of MIL-STD-19500 1500W surge capability at 10 x 100 us waveform, duty cycle: 0.
01% Excellent clamping capability Low zener impedance Fast response time: Typically less than 1.
0ps from 0 volts to VBR for unidirectional and 5.
0 ns for bidirectional Typical IR less than 1uA above 10V High temperature soldering guaranteed: 260°C / 10 seconds / .
375”,(9.
5mm) lead length / 5lbs.
,(2.
3kg) tension DO-201 Mechanical Data Case: Molded plastic Lead: Axial leads, solderable per MIL-STD-202, Lead: Method 208 Polarity: Color band denotes cathode except bipolar Weight: 0.
94gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20% Type Number Peak Power Dissipation at TA=25 C, Tp=1ms (Note 1) O Symbol PPK PD IFSM VF TJ, TSTG Value Minimum1500 5.
0 200 3.
5 / 5.
0 -55 to + 175 O Units Watts Watts Amps Volts °C Steady State Power Dissipation at TL=75 °C Lead Lengths .
375”, 9.
5mm (Note 2) Peak Forward Surge Current, 8.
3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) (Note 3) Maximum Instantaneous Forward Voltage at 50.
0A for Unidirectional Only (Note 4) Operating and Storage Temperature Range Notes: 1.
Non-repetitive Current Pulse Per Fig.
3 and Derated above TA=25 C Per Fig.
2.
Notes: 2.
Mounted on Copper Pad Area of 0.
8 x 0.
8” (20 x 20 mm) Per Fig.
4.
Notes: 3.
8.
3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minutes Notes: 3.
Maximum.
Notes: 4.
VF=3.
5V for Devices of VBR ≤ 200V and VF=5.
0V Max.
for Devices VBR>200V.
Devices for Bipolar Applications Notes: 1.
For ...



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