N-channel Power MOSFET - STMicroelectronics
Description
STW56NM60N
N-channel 600 V, 0.
05 Ω , 45 A TO-247 MDmesh™ II Power MOSFET
Preliminary data
Features
Order code STW56NM60N
■ ■ ■
VDSS 600 V
RDS(on) max < 0.
06 Ω
ID 45 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247
1 2 3
Applications
■
Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
Figure 1.
Internal schematic diagram
$
'
3
!-V
Table 1.
Device summary
Order code Marking 56NM60N Package TO-247 Packaging Tube
STW56NM60N
July 2011
Doc ID 15723 Rev 2
1/11
www.
st.
com 11
This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
Free Datasheet http://www.
datasheet-pdf.
com/
Contents
STW56NM60N
Contents
1 2 3 4 5 Electrical ratings .
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3 Electrical characteristics .
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4 Test circuits .
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Package mechanical data .
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7 Revision history .
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2/11
Doc ID 15723 Rev 2
Free Datasheet http://www.
datasheet-pdf.
com/
STW56NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Avalanche current, repet...
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