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W9NB80

STMicroelectronics
Part Number W9NB80
Manufacturer STMicroelectronics
Description STW9NB80
Published Feb 19, 2014
Detailed Description ® STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH™ MOSFET TYPE STW 9NB80 s s s s s s V DSS 800 V R DS(on) ...
Datasheet PDF File W9NB80 PDF File

W9NB80
W9NB80


Overview
® STW9NB80 N-CHANNEL 800V - 0.
85Ω - 9.
3A - TO-247 PowerMESH™ MOSFET TYPE STW 9NB80 s s s s s s V DSS 800 V R DS(on) <1Ω ID 9.
3 A TYPICAL RDS(on) = 0.
85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching ...



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