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K3209

Hitachi Semiconductor
Part Number K3209
Manufacturer Hitachi Semiconductor
Description 2SK3209
Published Feb 18, 2014
Detailed Description 2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December ...
Datasheet PDF File K3209 PDF File

K3209
K3209

Overview
...1998 Features • Low on-resistance R DS =35mΩ typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2 S 1.
Gate 2.
Drain 3.
Source 3 Free Datasheet http://www.
Datasheet-PDF.
com/ 2SK3209 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 25 100 25 25 46 35 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.
PW ≤ 10 µs, duty cycle ≤ 1 ...


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