DatasheetsPDF.com

2SC5248

Part Number	2SC5248
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Feb 18, 2014
Detailed Description	isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good...
Datasheet	2SC5248 PDF File

Overview

isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.
5 A 2 W 20 150 ℃...

Similar Datasheet

2SC5200 NPN TRANSISTOR - Toshiba Semiconductor
2SC5200 NPN EPITAXIAL SILICON TRANSISTOR - UTC
2SC5200 NPN Epitaxial Silicon Transistor - Fairchild Semiconductor
2SC5200 150 Watt Silicon NPN Power Transistors - Thinki Semiconductor
2SC5200 NPN Transistor - ON Semiconductor
2SC5200 NPN Transistor - STMicroelectronics
2SC5200 NPN Transistor - INCHANGE
2SC5200A Silicon NPN Transistor - JILIN SINO
2SC5200B Silicon NPN Transistor - JILIN SINO
2SC5200H NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)