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HGT1S12N60B3DS

Intersil Corporation
Part Number HGT1S12N60B3DS
Manufacturer Intersil Corporation
Title N-Channel IGBT
Description HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 File Number 4411.2 27A, 600V, UF...
Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduct...
Published Mar 23, 2005
Datasheet PDF File HGT1S12N60B3DS PDF File


HGT1S12N60B3DS
HGT1S12N60B3DS


Features
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use...



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