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HY1506I

HOOYI
Part Number HY1506I
Manufacturer HOOYI
Description N-Channel MOSFET
Published Feb 11, 2014
Detailed Description HY1506P/U/I N-Channel Enhancement Mode MOSFET Features • • • • 60V/55A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rat...
Datasheet PDF File HY1506I PDF File

HY1506I
HY1506I


Overview
HY1506P/U/I N-Channel Enhancement Mode MOSFET Features • • • • 60V/55A, RDS(ON)=10.
5 mΩ (typ.
) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D Pin Description S D S G S D G TO-220 I-PAK(TO-251) D TO-262 Applications • Power Management for Inverter Systems.
G S N-Channel MOSFET Ordering and Marking Information Package Code P HY1506 ÿ YYWWJ G U I HY1506 HY1506 ÿ YYWWJ G ÿ YYWWJ G P : TO220-3L D : I-PAK Date Code YYWW Assembly Material G : Lead Free Device I : TO262-3L Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant wi...



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