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2SD1845

Part Number	2SD1845
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Feb 10, 2014
Detailed Description	isc Silicon NPN Power Transistor 2SD1845 DESCRIPTION ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Swi...
Datasheet	2SD1845 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1845 DESCRIPTION ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.
) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2.
5 A ICM Collector Current-Peak 7 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Tempera...

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