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60T03GP

Advanced Power Electronics
Part Number 60T03GP
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Feb 3, 2014
Detailed Description AP60T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast...
Datasheet PDF File 60T03GP PDF File

60T03GP
60T03GP


Overview
AP60T03GS/P RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Speed G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12mΩ 45A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP60T03GP) are available for low-profile applications.
TO-263(S) TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 +20 45 32 120 44 0.
352 -55 to 175 -55 to 175 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.
4 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200809253 Free Datasheet http://www.
datasheet4u.
com/ AP60T03GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.
30 1 Typ.
0.
03 25 11.
6 3.
9 7 8.
8 57.
5 18.
5 6.
4 200 135 Max.
Units 12 25 3 1 250 +100 19 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA VGS=10V, ID=20A VGS=4.
5V, ID=15A VDS=VGS, ID=250uA Gate Threshold Voltage Forward Transconductance 2 VDS=10V, ID=10A VDS=30V, VGS=0V o ...


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