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B1412

Part Number	B1412
Manufacturer	Rohm
Description	2SB1412
Published	Feb 3, 2014
Detailed Description	Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2...
Datasheet	B1412 PDF File

Overview

Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat).
VCE(sat) = −0.
35V (Typ.
) (IC/IB = −4A / −0.
1A) 2) Excellent DC current gain characteristics.
3) Complements the 2SD2118.
zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −30 Collector-emitter voltage VCEO −20 Emitter-base voltage VEBO −6 Collector current −5 IC −10 Collector power dissipation 2SB1412 PC 1 10 Junction temperature Tj 150 Storage temperature Tstg −55 to 150 ∗1 Single pulse, Pw=10m...

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