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60T03GH

Advanced Power Electronics
Part Number 60T03GH
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Feb 2, 2014
Detailed Description AP60T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast...
Datasheet PDF File 60T03GH PDF File

60T03GH
60T03GH


Overview
AP60T03GH/J RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12mΩ 45A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP60T03GJ) are available for low-profile applications.
GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±20 45 32 120 44 0.
3 -55 to 175 -55 to 175 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.
4 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200810135 Free Datasheet http://www.
datasheet4u.
com/ AP60T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.
30 1 - Typ.
0.
03 25 12 4 7 10 9 58 18 6 200 135 1.
4 Max.
Units 12 25 3 1 250 ±100 20 16 2.
1 V V/℃ mΩ mΩ V S uA uA nA nC nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=20A VGS=4.
5V, ID=15A VDS=VGS, ID=250uA Gate Threshold Voltage Forward Transcon...


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