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2SK4106

Part Number	2SK4106
Manufacturer	Toshiba
Description	N-Channel MOSFET
Published	Jan 20, 2014
Detailed Description	2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications U...
Datasheet	2SK4106 PDF File

Overview

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.
4 Ω (typ.
) High forward transfer admittance: |Yfs| = 8.
5 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 12 48 45 364 12 4 150 -55 to 150 A W mJ A mJ °C °C Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipati...

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