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FDMC8360L

Fairchild Semiconductor
Part Number FDMC8360L
Manufacturer Fairchild Semiconductor
Description N-Channel Shielded Gate Power Trench MOSFET
Published Jan 12, 2014
Detailed Description FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFE...
Datasheet PDF File FDMC8360L PDF File

FDMC8360L
FDMC8360L

Overview
FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET 40 V, 80 A, 2.
1 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 2.
1 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 3.
1 mΩ at VGS = 4.
5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application „ DC-DC Conversion...


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