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AOD4106

Alpha & Omega Semiconductors
Part Number AOD4106
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AOD4106 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4106 uses advanced trench technolo...
Datasheet PDF File AOD4106 PDF File

AOD4106
AOD4106

Overview
AOD4106 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.
This device is suitable for use as a low side switch in SMPS and general purpose applications.
Standard Product AOD4106 is Pb-free (meets ROHS & Sony 259 specifications).
AOD4106L is a Green Product ordering option.
AOD4106 and AOD4106L are electrically identical.
Features VDS (V) = 25V ID = 50A (VGS = 20V) RDS(ON) < 5mΩ (VGS = 20V) RDS(ON) < 6.
5mΩ (VGS = 12V) RDS(ON) < 8.
1mΩ (VGS = 10V) UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK Top View Drain Connected to Tab D G S G D S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.
3mH TC=25°C Power Dissipation B Power Dissipation A C C Maximum 25 ±30 50 50 180 30 135 75 38 6.
25 4 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient A,D Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 1.
5 Max 20 50 2.
0 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
Free Datasheet http://www.
datasheet4u.
com/ AOD4106 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS= ±30V VDS=VGS ID=250µA VGS=12V, VDS=5V VGS=20V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=12V, ID=20A VGS=10V, ID=20A gFS VSD IS Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G 2 180 4.
1 6.
5 5.
4 6.
6 26 0.
7 1 50 1561 VGS=0V, VDS=12.
5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 642 323 2.
5 26.
5 VGS=10V, VDS=12.
5V, ID=20A 22.
5 8...


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