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AOD4104

Alpha & Omega Semiconductors
Part Number AOD4104
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AOD4104 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4104 uses advanced trench technolo...
Datasheet PDF File AOD4104 PDF File

AOD4104
AOD4104


Overview
AOD4104 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.
This device is ideally suited for use as a low side switch in CPU core power conversion.
-RoHS Compliant -Halogen Free* TO-252 D-PAK Features VDS (V) = 25V ID = 75A (VGS = 10V) RDS(ON) < 3.
6m Ω (VGS = 20V) RDS(ON) < 4.
5m Ω (VGS = 12V) RDS(ON) < 5.
4m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D G S S G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G,I Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.
3mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C TC=25°C G Maximum 25 ±30 75 75 200 30 135 100 50 2.
5 1.
6 -55 to 175 Units V V A A mJ W W °C Max 20 50 1.
5 Units °C/W °C/W °C/W VGS TC=100°C ID IDM IAR EAR PD PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B Symbol RθJA RθJC Typ 16 40 1 Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com Free Datasheet http://www.
datasheet4u.
com/ AOD4104 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS= ±30V VDS=VGS ID=250 µA VGS=12V, VDS=5V VGS=20V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=12V, ID=20A VGS=10V, ID=20A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V 2 200 3 4.
2 3.
7 4.
5 75 0.
7 1 55 2100 VGS=0V, VDS=12.
5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 850 400 0.
35 40 VGS=10V, VDS=12.
5V, I D=20A 33 11 14 12 VGS=10V, VDS=12.
5V, RL=0.
68 Ω , RGEN=3Ω IF=20A, dI/dt=100A/µs IF=20A, dI/dt=100A/µs 19 15 8.
5 42 34 1 50 2400 3.
6 5 4.
5 5.
4 S V A pF p...



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