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MJ802

Part Number	MJ802
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jan 9, 2014
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Ar...
Datasheet	MJ802 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= 7.
5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.
5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range ...

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