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2SD1195

Part Number	2SD1195
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Dec 26, 2013
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1195 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V...
Datasheet	2SD1195 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1195 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 2.
5A ·Low Saturation Voltage ·Complement to Type 2SB885 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation ...

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