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21N50C3

Infineon
Part Number 21N50C3
Manufacturer Infineon
Description SPB21N50C3
Published Dec 5, 2013
Detailed Description SPB21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Peri...
Datasheet PDF File 21N50C3 PDF File

21N50C3
21N50C3

Overview
SPB21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS @ Tjmax RDS(on) ID 560 0.
19 21 PG-TO263 V Ω A Type SPB21N50C3 Package PG-TO263 Ordering Code Q67040-S4566 Marking 21N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPB ID 21 13.
1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt 63 690 1 21 ±20 ±30 208 Value Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=10A, VDD=50V A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=21A...


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