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SW12N65

SAMWIN
Part Number SW12N65
Manufacturer SAMWIN
Description N-channel MOSFET
Published Nov 30, 2013
Detailed Description SAMWIN TO-220F TO-220 SW12N6 5 N-channel MOSFET BVDSS : 650V ID : 12.0A RDS(ON) : 0.8ohm 1 1 3 2 2 3 1 3 Features ■ Hi...
Datasheet PDF File SW12N65 PDF File

SW12N65
SW12N65

Overview
SAMWIN TO-220F TO-220 SW12N6 5 N-channel MOSFET BVDSS : 650V ID : 12.
0A RDS(ON) : 0.
8ohm 1 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.
8 Ω)@VGS=10V ■ Gate Charge (Typ 47nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 2 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
...


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