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SW12N60

SAMWIN
Part Number SW12N60
Manufacturer SAMWIN
Description N-channel MOSFET
Published Nov 30, 2013
Detailed Description SAMWIN SW12N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.7 Ω)@VGS=10V ■ Gate Charge (Typ 58nC) ■ Im...
Datasheet PDF File SW12N60 PDF File

SW12N60
SW12N60

Overview
SAMWIN SW12N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.
7 Ω)@VGS=10V ■ Gate Charge (Typ 58nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID 1 2 1 3 2 : 12.
0A RDS(ON) : 0.
7ohm 3 2 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
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