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AP20T03GJ-HF

Advanced Power Electronics
Part Number AP20T03GJ-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Nov 21, 2013
Detailed Description AP20T03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ F...
Datasheet PDF File AP20T03GJ-HF PDF File

AP20T03GJ-HF
AP20T03GJ-HF


Overview
AP20T03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 50mΩ 12.
5A Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP20T03GJ) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 +20 12.
5 8 40 12.
5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 10 62.
5 110 Unit ℃/W ℃/W ℃/W 1 200903204 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Free Datasheet http://www.
datasheet4u.
com/ AP20T03GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=8A VGS=4.
5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
30 1 - Typ.
6 4 1.
5 2.
3 6 30 10 3 270 70 50 1.
6 Max.
Units 50 80 3 1 250 +100 7 430 2.
4 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=30V, VGS=0V VGS= +20V, VDS=0V ID=10A VDS=24V VGS=4.
5V VDS=15V ID=10A RG=3.
3Ω,VGS=10V RD=1.
5Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Drain-Source Leakage Current (T j=125 ...


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