DatasheetsPDF.com

AP20T03GT-HF

Part Number	AP20T03GT-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Nov 21, 2013
Detailed Description	AP20T03GT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fas...
Datasheet	AP20T03GT-HF PDF File

Overview

AP20T03GT-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 50mΩ 3.
2A S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
G The TO-92 applications.
package is widely used for all commercial-industrial D S TO-92 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 +20 3.
2 2.
6 12 0.
83 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 150 Units ℃/W 1 201301081 Data and specifications subject to change without notice Free Datasheet http://www.
datasheet4u.
com/ AP20T03GT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=3A VGS=4.
5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=250uA VDS=5V, ID=3A VDS=24V, VGS=0V VGS= +20V, VDS=0V ID=3A VDS=15V VGS=4.
5V VDS=15V ID=1A RG=3.
3Ω VGS=10V VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Min.
30 1 Typ.
4 4 1.
5 2 4 9 14 2 300 70 50 1.
6 Max.
Units 50 80 3 10 +100 6.
4 480 3.
2 V mΩ mΩ V S uA nA nC nC nC ns ...

Similar Datasheet

AP20T03GT-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)