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2N4410

ON Semiconductor
Part Number 2N4410
Manufacturer ON Semiconductor
Title Amplifier Transistor
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4410/D Amplifier Transistor NPN Si...
Features = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector – Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter – Base Br...
Published Mar 23, 2005
Datasheet PDF File 2N4410 PDF File


2N4410
2N4410

Features
= 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector – Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) Emitte...


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