NPN SILICON TRANSISTOR - UTC
Description
UNISONIC TECHNOLOGIES CO.
, LTD
2SD1628
Preliminary
NPN SILICON TRANSISTOR
HIGH-CURRENT SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage.
* High hFE.
* Large current capacity.
1
SOT-89
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SD1628L-x-AB3-R
2SD1628G-x-AB3-R
Note: Pin Assignment: E: Emitter B: Base C: Collector
Package SOT-89
Pin Assignment 123 BCE
Packing Tape Reel
MARKING
www.
unisonic.
com.
tw Copyright © 2016 Unisonic Technologies Co.
,
1of 3
QW-R208-045.
b
2SD1628
Preliminary
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
60 20
V V
Emitter-Base Voltage Collector Current Collector Dissipation
DC Pulse
VEBO IC ICP PC
6 5 8 0.
5
V A A W
Junction Temperature Storage Temperature
TJ TSTG
150 -55~+150
°C °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current
DC Current Gain
Output Capacitance Transition Frequency Turn On Time Storage Time Fall Time
SYMBOL VCE(SAT) VBE(SAT)
ICBO IEBO hFE1 hFE2 Cob fT tON tS tF
TEST CONDITIONS IC =3A, IB =60mA IC =3A, IB =60mA VCB =50V, IE =0 VEB =5V, IC =0 VCE =2V, IC =0.
5A VCE =2V, IC =3A VCB =10V, f =1MHz VCE =10V, IC =50mA
See specified Test circuit
MIN TYP MAX UNIT 500 mV 1.
5 V 100 nA 100 nA
120 560 95
45 pF 120 MHz 30 ns 300 ns 40 ns
■ CLASSIFICATION OF hFE1
RANK RANGE
E 120 ~ 200
F 160 ~ 320
G 280 ~ 560
UNISONIC TECHNOLOGIES CO.
, LTD
www.
unisonic.
com.
tw
2 of 3
QW-R208-045.
b
2SD1628
Preliminary
NPN SILICON TRANSISTOR
■ SWITCHING TIME TEST CIRCUIT
IB1 INPUT
1
PW=10μS
Duty=2% tR, t...
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