NPN Epitaxial Planar Silicon Transistor - Kexin
Description
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SD1628
Features
Low saturation voltage.
High hFE.
Large current capacity.
Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.
8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 20 6 5 8 500 1.
5 150 -55 to +150 Unit V V V A A mW W
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SMD Type
2SD1628
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Storage time Turn-off time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 50 V, IE=0 VEB = 5 V, IC=0 VCE = 2 V , IC = 0.
5 A VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.
0MHz
Transistors Diodes
Min
Typ
Max 100 100
Unit nA nA
120 120 45
560 MHz pF 500 1.
5 mV V V V V 30 300 40 ns ns ns
VCE(sat) IC = 3 A , IB = 60 mA VBE(sat) IC = 3 A , IB = 60 mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton tstg tf 60 20 6
hFE Classification
Marking Rank hFE E 120 200 DK F 160 320 G 280 560
2
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