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NE5550979A

Renesas
Part Number NE5550979A
Manufacturer Renesas
Description Silicon Power LDMOS FET
Published Nov 10, 2013
Detailed Description Data Sheet NE5550979A Silicon Power LDMOS FET FEATURES • • • • • R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 High Output Po...
Datasheet PDF File NE5550979A PDF File

NE5550979A
NE5550979A

Overview
Data Sheet NE5550979A Silicon Power LDMOS FET FEATURES • • • • • R09DS0031EJ0300 Rev.
3.
00 Mar 12, 2013 High Output Power : Pout = 39.
5 dBm TYP.
(VDS = 7.
5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 66% TYP.
(VDS = 7.
5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) High Linear gain : GL = 22 dB TYP.
(VDS = 7.
5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge) Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS • 150 MHz Band Radio System • 460 MHz Band Radio System • 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550979A Order Number NE5550979A-A P...


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