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NE5550779A

Renesas
Part Number NE5550779A
Manufacturer Renesas
Description Silicon Power LDMOS FET
Published Nov 10, 2013
Detailed Description Data Sheet NE5550779A Silicon Power LDMOS FET FEATURES • • • • • R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 High Output Po...
Datasheet PDF File NE5550779A PDF File

NE5550779A
NE5550779A

Overview
Data Sheet NE5550779A Silicon Power LDMOS FET FEATURES • • • • • R09DS0040EJ0300 Rev.
3.
00 Mar 12, 2013 High Output Power : Pout = 38.
5 dBm TYP.
(VDS = 7.
5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 66% TYP.
(VDS = 7.
5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High Linear gain : GL = 22.
0 dB TYP.
(VDS = 7.
5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm) High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS • 150 MHz Band Radio System • 460 MHz Band Radio System • 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550779A Order Number NE5550779A-A Package 79A (Pb-Free) Marking W8 Supplying Form • 12 mm...


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