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NE3516S02

Renesas
Part Number NE3516S02
Manufacturer Renesas
Description N-Channel GaAs HJ-FET
Published Nov 10, 2013
Detailed Description Data Sheet NE3516S02 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES R09DS0038EJ0100 Rev.1.00 Apr...
Datasheet PDF File NE3516S02 PDF File

NE3516S02
NE3516S02

Overview
Data Sheet NE3516S02 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES R09DS0038EJ0100 Rev.
1.
00 Apr 18, 2012 • Low noise figure and high associated gain NF = 0.
35 dB TYP.
, Ga = 14 dB TYP.
@ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.
35 dB TYP.
, Ga = 13.
5 dB TYP.
@ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value) • 4-pin Micro-X plastic (S02) package APPLICATIONS • X to Ku band DBS LNB • Other Ku band communication system ORDERING INFORMATION Part Number Order Number Package S02 package (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking P Supplying Form • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape NE3516S02-T1C NE3516S02-T1C-A NE35...


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