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NE3510M04

CEL
Part Number NE3510M04
Manufacturer CEL
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR
Published Nov 10, 2013
Detailed Description DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURE...
Datasheet PDF File NE3510M04 PDF File

NE3510M04
NE3510M04

Overview
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.
45 dB TYP.
, Ga = 16 dB TYP.
@ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.
35 dB TYP.
, Ga = 19 dB TYP.
@ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only) • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, DMB, etc.
) antenna LNA • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3510M0 4 NE3510M04-T2 Order Number N E 35 10 M0 4- A NE3510M04-T2-A Package Flat-lead 4-pin thintype super minimold (M04) (Pb-Free) Quantity 50 p cs ( N on r eel ) ...


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