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UPD5756T6N

Renesas
Part Number UPD5756T6N
Manufacturer Renesas
Description SiGe BiCMOS
Published Nov 10, 2013
Detailed Description Data Sheet μPD5756T6N SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function DESCRIPTION R09DS0026EJ010...
Datasheet PDF File UPD5756T6N PDF File

UPD5756T6N
UPD5756T6N

Overview
Data Sheet μPD5756T6N SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function DESCRIPTION R09DS0026EJ0100 Rev.
1.
00 Oct 04, 2011 The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application.
This IC exhibits low noise figure and low distortion characteristics.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES • Low voltage operation • Low current consumption • • • • • : : : Operation frequency : Low noise : Low distortion : Low insertion loss : High-density surface mounting : VCC = 3.
1 to 3.
5 V (3.
3 V TYP.
) ICC1 = 25 mA TYP.
@VCC = 3.
3 V (LN...


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