Silicon NPN Epitaxial Type Transistor - Kexin
Description
SMD Type
Silicon NPN Epitaxial 2SC4209
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Transistors IC
Unit: mm
+0.
1 2.
4-0.
1
+0.
1 1.
3-0.
1
Features
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 300 60 200 150 -55 to +150 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO Testconditons VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 80 70 240 0.
5 0.
55 100 10 0.
8 V V MHz pF Min Typ Max 0.
1 0.
1 Unit ìA ìA V
V(BR)CEO IC = 5mA , IB = 0 hFE VCE = 2 V, IC = 50 mA
VCE (sat) IC = 200 mA, IB = 10 mA VBE fT Cob VCE = 2 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
hFE Classification
Marking Rank hFE O 70 140 C Y 120 240
+0.
1 0.
38-0.
1
0-0.
1
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