Silicon NPN epitaxial planar type Transistor - Kexin
Description
SMD Type
Silicon NPN Epitaxial Planar Type 2SC3125
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Transistors IC
Unit: mm
+0.
1 2.
4-0.
1
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
Features
Good Lineality of fT
+0.
1 1.
3-0.
1
0.
4
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 4 50 25 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Saturation Voltage Collector-Emitter Saturation Voltage Baser-Emitter Transition Frequency Collector Output Capacitance Collector-BaseTime Constant Symbol ICBO IEBO Testconditons VCB = 30V, IE = 0 VEB = 3V, IC = 0 25 20 70 200 0.
2 1.
5 VCE = 10 V, IC = 10mA VCC=10V,IE=0,f=1MHz VCB=10V,IC=1mA,f=30MHz 250 600 1.
1 1.
6 25 V V MHz pF ps Min Typ Max 0.
1 1.
0 Unit ìA ìA V
V(BR)CEO IC=10mA,IB=0 hFE VCE(sat) VBE(sat) fT Cob Cc.
rbb' VCE = 10 V, IC = 10mA IC=15mA,IB=1.
5mA
Marking
Marking HH
+0.
1 0.
38-0.
1
0-0.
1
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