Silicon NPN Epitaxial Type Transistor - Kexin
Description
SMD Type
Silicon NPN Epitaxial 2SC2619
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Transistors IC
Unit: mm
Features
+0.
1 2.
4-0.
1
+0.
1 1.
3-0.
1
High frequency amplifier.
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 30 5 100 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter voltage Gain bandwidth product Collector output capacitance Noise figure Symbol Testconditons Min 30 30 5 0.
5 0.
5 60 200 1.
1 0.
75 230 3.
5 5 V V MHz pF dB Typ Max Unit V V V ìA ìA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ICBO IEBO hFE VCB = 20V, IE=0 VEB = 2V, IC=0 VCE = 12V , IC = 2mA
VCE(sat) IC = 10mA , IB = 1mA VBE fT Cob NF VCE = 12V , IC = 2mA VCE = 12V , IC = 2mA VCB = 10V , IE=0, f = 1MHz VCE = 6V, IC = 2mA, f = 1MHz, Rg = 500Ù
hFE Classification
Marking hFE FB 60 120 FC 100 200
+0.
1 0.
38-0.
1
0-0.
1
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