SMD Type
Silicon NPN Epitaxial 2SC2618
SOT-23
+0. 1 2. 9-0. 1 +0. 1 0. 4-0. 1
Transistors IC
Unit: mm
+0. 1 2. 4-0. 1
Features
Low frequency amplifier.
+0. 1 1. 3-0. 1
1
+0. 1 0. 95-0. 1 +0. 1 1. 9-0. 1
2
0. 55
0. 4
3
+0. 05 0. 1-0. 01
+0. 1 0. 97-0. 1
1. Base 2. Emitter 3. collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 35 35 4 500 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol Testconditons Min 35 35 4 0. 5 100 10 0. 2 0. 64 0. 6 V V 320 Typ Max Unit V V V ìA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ICBO hFE1 hFE2 VCB = 20V, IC = 0 VCE = 3V , IC = 10mA VCE = 3V , IC = 500mA
VCE(sat) IC = 150mA , IB = 15mA VBE VCE = 3V , IC = 10mA
hFE Classification
Marking hFE RC 100 200 RD 160 320
+0. 1 0. 38-0. 1
0-0. 1
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