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2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
NPN Silicon Epitaxial Transistor
TO-92
A E
Features
• • • • • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0. 4Watts of Power Dissipation. Collector-current 0. 15A Collector-base Voltage 60V Marking : C1815
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Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information)
Operating and storage junction temperature range:-55oC to +125oC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage* (IC=0. 1mAdc, IB =0) Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Emitter-Base Breakdown Voltage (I E =100uAdc,IC=0) Collector Cutoff Current (VCB=60Vdc, IE =0Adc) Collector Cutoff Current (VCB=50Vdc, IE =0Adc) Emitter Cutoff Current (VEB =5. 0Vdc, IC=0Adc) DC Current Gain* (IC=2. 0mAdc, V CE=6. 0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Voltage (IE=310mAdc) Transistor Frequency (IC=1. 0mAdc, V CE=10Vdc, f=30MHz) O 70-140 Y 120-240 Min 50 60 5 0. 1 0. 1 0. 1 Max Units Vdc Vdc
B
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO
C Vdc uAdc uAdc uAdc D
ON CHARACTERISTICS
hFE(1) VCE(sat) VBE(sat) VBE 70 700 0. 25 1. 0 1. 45 Vdc Vdc Vdc
DIM A B C D E G
E
G
DIMENSIONS INCHES MIN . 170 . 170 . 550 . 010 . 130 . 010
C B
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MM MAX . 190 . 190 . 590 . 020 . 160 . 104 MIN 4. 33 4. 30 13. 97 0. 36 3. 30 2. 44 MAX 4. 83 4. 83 14. 97 0. 56 3. 96 2. 64 NOTE
SMALL-SIGNAL CHARACTERISTICS
fT 80 GR 200-400 MHz BL 350-700
CLASSIFICATION OF HFE (1)
Rank Range
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Revision: C
1 of 3
2011/08/22
Free Datasheet http://www. datasheet4u. com/
2SC1815 Typical Characteristi...
2SC1815-GR PDF File
