Silicon NPN Transistor - Kexin
Description
SMD Type
Silicon NPN Epitaxial Planar Type 2SC2295
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Transistors IC
Unit: mm
Features
+0.
1 2.
4-0.
1
Optimum for RF amplification of FM/AM radios.
High transition frequency fT.
Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
+0.
1 1.
3-0.
1
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 5 30 200 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Forward current transfer ratio Transition frequency Noise figure Reverse transfer impedance Reverse transfer capacitance Symbol ICBO hFE fT NF Zrb Cre Testconditons VCB = 10 V, IE = 0 VCB = 10 V, IC = -1 mA VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 5 MHz VCB = 10 V, IE = -1 mA, f = 2 MHz VCB = 10 V, Ic = -1 mA, f = 10.
7 MHz 70 100 250 2.
8 22 0.
9 4.
0 50 1.
5 Min Typ Max 0.
1 220 MHz dB Ù pF Unit ìA
hFE Classification
Marking hFE VB 70 140 VC 110 220
+0.
1 0.
38-0.
1
0-0.
1
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