Transistor - TY Semiconductor
Description
Product specification
2SB806
SOT- 89 4.
50¡À0.
1 1.
80¡À0.
1 2 .
5 0 ¡À 0 .
1 4 .
0 0 ¡À 0 .
1 ¡ö Unit:mm 1.
50 ¡À0.
1
Features
1 2 3
¡ñ High collector to emitter voltage: VCEO£¾-120V.
0 .
8 0 ¡À 0 .
1
0.
44¡À0.
1 2 .
6 0 ¡À 0 .
1 0 .
4 0 ¡À 0 .
1 1.
Base 2.
Collector 3.
Emitter
Min
0.
48¡À0.
1 0.
53¡À0.
1
3.
00¡À0.
1
¡ö
Absolute Maximum Ratings Ta = 25¡æ
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) *1 Collector power dissipation Junction temperature Storage temperature *1.
PW¡Ü10ms,duty cycle¡Ü50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating -120 -120 -5 -0.
7 -1.
2 2 150 -55 to +150 Unit V V V A A W ¡æ ¡æ
¡ö
Electrical Characteristics Ta = 25¡æ
Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Output capacitance Transition frequency * PW¡Ü350µs,duty cycle΅ά 2% Symbol ICBO IEBO hFE Testconditons VCB = -120V, IE=0 VEB = -5V, IC=0 VCE =-1V , IC = -100mA VCE =-1V , IC = -5.
0mA VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA VBE Cob fT VCE =-10V , IC = -10mA VCB = -10V , IE = 0 , f = 1.
0MHz VCE = -10V , IE = 10mA -550 90 45 200 200 -0.
4 -0.
9 -620 14 75 -0.
6 -1.
5 -650 V V mV pF MHz Typ Max -100 -100 400 Unit nA nA
hFE Classification
Marking hFE KR 90¡« 180 KQ 135¡« 270 KP 200¡« 400
http://www.
twtysemi.
com
sales@twtysemi.
com
4008-318-123
1 of 3
Free Datasheet http://www.
datasheet4u.
com/
Product specification
2SB806
http://www.
twtysemi.
com
sales@twtysemi.
com
4008-318-123
2 of 3
Free Datasheet http://www.
datasheet4u.
com/
Product specification
2SB806
http://www.
twtysemi.
com
sales@twtysemi.
com
4008-318-123
3 of 3
Free Datasheet http://www.
datasheet4u.
com/
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