Silicon NPN Power Transistors - Inchange Semiconductor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for ultrahigh-definition color display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
16
A
125
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3685
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB = 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 1A
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
Switching Times
tstg
Storage Time
tf
Fall Time
IC= 4A, IB1= 0.
8A; IB2= -1.
6A
2SC3685
MIN TYP.
MAX UNIT
800
V
5.
0
V
1.
5
V
1
mA
1
mA
8
3.
0 μs 0.
2 μs
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in thes...
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