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2SC3659

Part Number	2SC3659
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 25, 2013
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe ·Minim...
Datasheet	2SC3659 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SC3659 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2...

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