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2SC3657

Part Number	2SC3657
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 25, 2013
Detailed Description	isc Silicon NPN Power Transistor 2SC3657 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ...
Datasheet	2SC3657 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3657 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ...

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