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2SA1301

Part Number	2SA1301
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 24, 2013
Detailed Description	isc Silicon PNP Power Transistor 2SA1301 DESCRIPTION ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V...
Datasheet	2SA1301 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1301 DESCRIPTION ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SC3280 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature...

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