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2SD1706

Part Number	2SD1706
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Oct 15, 2013
Detailed Description	isc Silicon NPN Power Transistor 2SD1706 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good ...
Datasheet	2SD1706 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1706 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.
5V(Max.
)@ IC= 7A ·Complement to Type 2SB1155 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ T...

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