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2SC6125

Part Number	2SC6125
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Oct 15, 2013
Detailed Description	2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Power Amplifier Applica...
Datasheet	2SC6125 PDF File

Overview

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Power Amplifier Applications • High DC current gain: hFE = 180 to 390 (IC = 0.
5 A) • Low collector-emitter saturation: VCE (sat) = 0.
2 V (max) • High-speed switching: tf = 15 ns (typ.
) Unit : mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg Rating 40 20 6 4 7 0.
4 1 2.
5 150 −55 to 150 Unit V V V A JEDEC A W °C °C ― SC-62 2-5K1A JEI...

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