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MT4435L2

Mos-Tech
Part Number MT4435L2
Manufacturer Mos-Tech
Description P-Channel Enhancement Mode Field Effect Transistor
Published Oct 7, 2013
Detailed Description Mos-Tech Semiconductor Co.,LTD. MT4435L2 P-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● Super h...
Datasheet PDF File MT4435L2 PDF File

MT4435L2
MT4435L2

Overview
Mos-Tech Semiconductor Co.
,LTD.
MT4435L2 P-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement TO-252 package PRODUCT SUMMARY VDSS -30V ID -7A RDS(ON) (mΩ) Typ 98@ VGS=-10V 130 @ VGS=-4.
5V D S NOTE：The MT4435L2 is available in a lead-free package G G S D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit -30 ±20 -7 -24 -1...


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