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FQT1N80

Fairchild Semiconductor
Part Number FQT1N80
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Oct 6, 2013
Detailed Description FQT1N80 N-Channel MOSFET November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features • RDS(on) = 15.5Ω (Typ.)...
Datasheet PDF File FQT1N80 PDF File

FQT1N80
FQT1N80

Overview
FQT1N80 N-Channel MOSFET November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.
2A, 20Ω Features • RDS(on) = 15.
5Ω (Typ.
)@ VGS = 10V, ID = 0.
1A • Low gate charge ( Typ.
5.
5nC) • Low Crss ( Typ.
2.
7pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mo...


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