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FCI25N60N

Fairchild Semiconductor
Part Number FCI25N60N
Manufacturer Fairchild Semiconductor
Description N-Channel SupreMOS MOSFET
Published Oct 6, 2013
Detailed Description FCI25N60N — N-Channel SupreMOS® MOSFET FCI25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ November 2013 Feature...
Datasheet PDF File FCI25N60N PDF File

FCI25N60N
FCI25N60N

Overview
FCI25N60N — N-Channel SupreMOS® MOSFET FCI25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ November 2013 Features • RDS(on) = 107 mΩ (Typ.
) @ VGS = 10 V, ID = 12.
5 A • Ultra Low Gate Charge (Typ.
Qg = 57 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 262 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching p...


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