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2SA1987

Part Number	2SA1987
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications 2SA1987 Unit: mm • High break...
Datasheet	2SA1987 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications 2SA1987 Unit: mm • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO −230 V Collector-emitter voltage V CEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.
5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 180 W Tj 150 °C T stg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Note: Using continuously un...

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